EFFECT OF NITROGEN CONTENT IN a-Si:H/a-SiNx:H MULTILAYERS ON CONDUCTIVE MECHANISM

We studied the effect of nitrogen content in a-SaN_x:H barrier layers to a-Si:H/a-SiN_x:H mutilayers with different thickness of a-Si:H well layers. It was shown that, except quantum well effect, the ratio of N/Si and interfacial defects of multilayers have influence on the conduction mechanism. The activation energy of mobility ΔE is equal to 0.17±0.03eV which is attributed to the interfacial scattering.