INVESTIGATION OF NITROGEN CONTENT INFLUENCE ON ELECTRON SPIN RESONANCE IN a-Si:H/a-SiN_x:H MULATLATYERS

Influence of nitrogen content on electron spin resonance (ESR) in a-Si:H/a-SiN_x:H multilayers is studied, associated with infrared absorption analysis. The spin density decreases rapidly in the region x>~ 0.7 and approaches a saturated value, which is much less than common assumption. The results are explained in terms of the structure relaxation due to the increase of N-H bonds with increasing x and the transfer doping across interfaces.