STUDY OF NEUTRON IRRADIATED a-Si:H
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Abstract
Neutron transmutation doping (NTD) effect in hydrogenated amorphous silicon (a-Si:H) has been reexamined. There is no increase of both dark and photoconductivity of neutron irradiated a-Si:H after annealing at 180°C or 240°C . Our experimental results support Burnett et al. who contradict the finding that NTD in a-Si:H is effective by Hamanaka et al.
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WANG Shulin, CHENG Ruguang, QI Mingwei, TANG Wenguo, SHEN Xuechu, GAO Jijin. STUDY OF NEUTRON IRRADIATED a-Si:H[J]. Chin. Phys. Lett., 1990, 7(9): 418-420.
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WANG Shulin, CHENG Ruguang, QI Mingwei, TANG Wenguo, SHEN Xuechu, GAO Jijin. STUDY OF NEUTRON IRRADIATED a-Si:H[J]. Chin. Phys. Lett., 1990, 7(9): 418-420.
|
WANG Shulin, CHENG Ruguang, QI Mingwei, TANG Wenguo, SHEN Xuechu, GAO Jijin. STUDY OF NEUTRON IRRADIATED a-Si:H[J]. Chin. Phys. Lett., 1990, 7(9): 418-420.
|
WANG Shulin, CHENG Ruguang, QI Mingwei, TANG Wenguo, SHEN Xuechu, GAO Jijin. STUDY OF NEUTRON IRRADIATED a-Si:H[J]. Chin. Phys. Lett., 1990, 7(9): 418-420.
|
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