IDENTIFICATIONS OF PHOTOLUMINESCENCE AND DEEP LEVEL TRANSIENT SPECTRA FOR Te-DOPED A1_xGa_1-xAs

A bound-exciton and a donor-acceptor(D-A) pair emission in photoluminescence are identified for Te-doped A1_xGa_1-xAs. The D-A pair emission near band edge is assigned as Te-related donor to carbon acceptor transition and the donor binding energy is determined as a function of composition x up to 0.75. Except the deep DX level, a new shallower deep state is found in deep level transient spectra under light illumination and is associated with Te-related donor state in PL.