XPS STUDY OF ION IRRADIATED Cu/SiO2 INTERFACES
-
Abstract
XPS study was carried out on Cu/SiO2 interface following the irradiation of 6.0MeV Si ion beam. The chemical shift in the copper spectra reveals for the first time the existence of a chemically bonded structure in the interface region resulting from ion irradiation.
Article Text
-
-
-
About This Article
Cite this article:
LIU Jiarui, CHEN Zhengyuan, GUO Xiaodong. XPS STUDY OF ION IRRADIATED Cu/SiO2 INTERFACES[J]. Chin. Phys. Lett., 1989, 6(3): 135-137.
|
LIU Jiarui, CHEN Zhengyuan, GUO Xiaodong. XPS STUDY OF ION IRRADIATED Cu/SiO2 INTERFACES[J]. Chin. Phys. Lett., 1989, 6(3): 135-137.
|
LIU Jiarui, CHEN Zhengyuan, GUO Xiaodong. XPS STUDY OF ION IRRADIATED Cu/SiO2 INTERFACES[J]. Chin. Phys. Lett., 1989, 6(3): 135-137.
|
LIU Jiarui, CHEN Zhengyuan, GUO Xiaodong. XPS STUDY OF ION IRRADIATED Cu/SiO2 INTERFACES[J]. Chin. Phys. Lett., 1989, 6(3): 135-137.
|
DownLoad: