PHOTOINDUCED DEFECT OPTICAL ABSORPTION IN a-Si:H
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Abstract
The photoinduced defect absorption in a-Si:H excited by bandgap light was studied. Energy position of light-induced metastable defects is different from that of native dangling bonds.
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Cite this article:
WU Lei, HAN Daxing. PHOTOINDUCED DEFECT OPTICAL ABSORPTION IN a-Si:H[J]. Chin. Phys. Lett., 1989, 6(4): 181-184.
WU Lei, HAN Daxing. PHOTOINDUCED DEFECT OPTICAL ABSORPTION IN a-Si:H[J]. Chin. Phys. Lett., 1989, 6(4): 181-184.
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WU Lei, HAN Daxing. PHOTOINDUCED DEFECT OPTICAL ABSORPTION IN a-Si:H[J]. Chin. Phys. Lett., 1989, 6(4): 181-184.
WU Lei, HAN Daxing. PHOTOINDUCED DEFECT OPTICAL ABSORPTION IN a-Si:H[J]. Chin. Phys. Lett., 1989, 6(4): 181-184.
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