REGROWTH OF MBE-GaAs FILMS ON Si SUBSTRATES BY HIGH ENERGY ION-IMPLANTATION AND SUBSEQUENT ANNEALING

  • 4.2MeV 7Li channeling technique, laser Raman scattering spectrometry, and TEM have been utilized to study the regrowth of MBE-GaAs films of ~μm thick on Si substrates by Si+ implantation (0.6-2.6Me V) and subsequent rapid thermal annealing. The results showed that crystalline disorder was greatly reduced in the recrystalized layers especially at the interface.

  • Article Text

  • loading

Catalog

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return