REGROWTH OF MBE-GaAs FILMS ON Si SUBSTRATES BY HIGH ENERGY ION-IMPLANTATION AND SUBSEQUENT ANNEALING
-
Abstract
4.2MeV 7Li channeling technique, laser Raman scattering spectrometry, and TEM have been utilized to study the regrowth of MBE-GaAs films of ~μm thick on Si substrates by Si+ implantation (0.6-2.6Me V) and subsequent rapid thermal annealing. The results showed that crystalline disorder was greatly reduced in the recrystalized layers especially at the interface.
Article Text
-
-
-
About This Article
Cite this article:
XIAO Guangming, YIN Shiduan, ZHANG Jingping, FAN Tiwen, LIU Jiarui, DING Aiju, ZHOU Junming, ZHU Peiruan. REGROWTH OF MBE-GaAs FILMS ON Si SUBSTRATES BY HIGH ENERGY ION-IMPLANTATION AND SUBSEQUENT ANNEALING[J]. Chin. Phys. Lett., 1989, 6(10): 451-454.
XIAO Guangming, YIN Shiduan, ZHANG Jingping, FAN Tiwen, LIU Jiarui, DING Aiju, ZHOU Junming, ZHU Peiruan. REGROWTH OF MBE-GaAs FILMS ON Si SUBSTRATES BY HIGH ENERGY ION-IMPLANTATION AND SUBSEQUENT ANNEALING[J]. Chin. Phys. Lett., 1989, 6(10): 451-454.
|
XIAO Guangming, YIN Shiduan, ZHANG Jingping, FAN Tiwen, LIU Jiarui, DING Aiju, ZHOU Junming, ZHU Peiruan. REGROWTH OF MBE-GaAs FILMS ON Si SUBSTRATES BY HIGH ENERGY ION-IMPLANTATION AND SUBSEQUENT ANNEALING[J]. Chin. Phys. Lett., 1989, 6(10): 451-454.
XIAO Guangming, YIN Shiduan, ZHANG Jingping, FAN Tiwen, LIU Jiarui, DING Aiju, ZHOU Junming, ZHU Peiruan. REGROWTH OF MBE-GaAs FILMS ON Si SUBSTRATES BY HIGH ENERGY ION-IMPLANTATION AND SUBSEQUENT ANNEALING[J]. Chin. Phys. Lett., 1989, 6(10): 451-454.
|