TIME-RESOLVED PHOTOLUMINESCENCE FROM InxGa1-xAs/GaAs SINGLE QUANTUM WELL
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Abstract
We have measured the time-resolved photoluminescence spectra of several InxGa1-xAs/GaAs single quantum well samples at 77K. The different temporal behaviors of the photoluminescence (PL) from the GaAs layer and the excitonic emission from the InxGa1-xAs well were obtained. The lifetime for the exciton in the InxGa1-xAs well were determined to be 110-170ps. The trapping efficiency of the well to the carriers was about 80%.
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QIAN Shixiong, YUAN Shu, LI Yufen, T.G .Andersson, CHEN Zonggui, PENG Wenji, YU Zhenxin. TIME-RESOLVED PHOTOLUMINESCENCE FROM InxGa1-xAs/GaAs SINGLE QUANTUM WELL[J]. Chin. Phys. Lett., 1989, 6(12): 559-562.
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QIAN Shixiong, YUAN Shu, LI Yufen, T.G .Andersson, CHEN Zonggui, PENG Wenji, YU Zhenxin. TIME-RESOLVED PHOTOLUMINESCENCE FROM InxGa1-xAs/GaAs SINGLE QUANTUM WELL[J]. Chin. Phys. Lett., 1989, 6(12): 559-562.
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QIAN Shixiong, YUAN Shu, LI Yufen, T.G .Andersson, CHEN Zonggui, PENG Wenji, YU Zhenxin. TIME-RESOLVED PHOTOLUMINESCENCE FROM InxGa1-xAs/GaAs SINGLE QUANTUM WELL[J]. Chin. Phys. Lett., 1989, 6(12): 559-562.
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QIAN Shixiong, YUAN Shu, LI Yufen, T.G .Andersson, CHEN Zonggui, PENG Wenji, YU Zhenxin. TIME-RESOLVED PHOTOLUMINESCENCE FROM InxGa1-xAs/GaAs SINGLE QUANTUM WELL[J]. Chin. Phys. Lett., 1989, 6(12): 559-562.
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