RESONANT BEHAVIOUR OF GaAs LO PHONONS IN A GaAs-A1As SUPERLATTICE

¹Department of Physics, Peking University, Beijing ²Department of Physics and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA ³Department of Electrical Engineering and coordinated ScienceLab., University of " 1llinois at Urbana-Champaign, Urbana, IL61801, USA)*Also at Coordinated Science Lab., UIUC.

Published Date: February 29, 1988

Abstract

Resonant Raman scattering from GaAs LO phonons in a 59Å GaAS/20Å AlAs superlattice was studied. The relevant intersubband energies were determined. The results suggest that all of the exciton transitions from the hole subbands HH1, LH1, HH2, HH3, LH2 and HH4 to the electron subbands CB1 and CB2 in the energy region covered by our incident dye laser were observed and a justificative analysis may involve effects due to valence band mixing and to 3D electronic miniband structure.