NN PAIR EMISSION IN GaAs0.15P0.85: N UNDER HYDROSTATIC PRESSURE
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Abstract
The photoluminescence of GaAs0.15P0.85: N has been studied at 77K under hydrostatic pressure. The NN1 emission is clearly observed when P>l0kbar. This result indicates that pressure enhances the thermally assisted Nx→NN1 exciton transfer. The pressure behaviors of Nx and NN1 levels are analysed.
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ZHANG Yong, YU Qi, ZHENG Jiansheng, YAN Bingzhang, WU Boxi, LI Guohua, WANG Zhaoping, HAN Hexiang. NN PAIR EMISSION IN GaAs0.15P0.85: N UNDER HYDROSTATIC PRESSURE[J]. Chin. Phys. Lett., 1988, 5(8): 353-356.
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ZHANG Yong, YU Qi, ZHENG Jiansheng, YAN Bingzhang, WU Boxi, LI Guohua, WANG Zhaoping, HAN Hexiang. NN PAIR EMISSION IN GaAs0.15P0.85: N UNDER HYDROSTATIC PRESSURE[J]. Chin. Phys. Lett., 1988, 5(8): 353-356.
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ZHANG Yong, YU Qi, ZHENG Jiansheng, YAN Bingzhang, WU Boxi, LI Guohua, WANG Zhaoping, HAN Hexiang. NN PAIR EMISSION IN GaAs0.15P0.85: N UNDER HYDROSTATIC PRESSURE[J]. Chin. Phys. Lett., 1988, 5(8): 353-356.
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ZHANG Yong, YU Qi, ZHENG Jiansheng, YAN Bingzhang, WU Boxi, LI Guohua, WANG Zhaoping, HAN Hexiang. NN PAIR EMISSION IN GaAs0.15P0.85: N UNDER HYDROSTATIC PRESSURE[J]. Chin. Phys. Lett., 1988, 5(8): 353-356.
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