PHOTOREFLECTANCE OF GaAs DOPING SUPERLATTICES
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Abstract
Photoreflectance of GaAs doping superlattices has been measured at 300K. The spectra exhibits features corresponding to spatially direct transitions due to quantized electron or hole states. We demonstrate the utility of the photoreflectance technique for studying quantum size effects in doping superlattices.
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WANG Ruozhen, ZHAO Mingshan, LIN Zhenjin, HAN Zhiyong, JIANG Desheng, LIANG Jiben, ZHUANG Weihua. PHOTOREFLECTANCE OF GaAs DOPING SUPERLATTICES[J]. Chin. Phys. Lett., 1987, 4(4): 189-192.
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WANG Ruozhen, ZHAO Mingshan, LIN Zhenjin, HAN Zhiyong, JIANG Desheng, LIANG Jiben, ZHUANG Weihua. PHOTOREFLECTANCE OF GaAs DOPING SUPERLATTICES[J]. Chin. Phys. Lett., 1987, 4(4): 189-192.
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WANG Ruozhen, ZHAO Mingshan, LIN Zhenjin, HAN Zhiyong, JIANG Desheng, LIANG Jiben, ZHUANG Weihua. PHOTOREFLECTANCE OF GaAs DOPING SUPERLATTICES[J]. Chin. Phys. Lett., 1987, 4(4): 189-192.
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WANG Ruozhen, ZHAO Mingshan, LIN Zhenjin, HAN Zhiyong, JIANG Desheng, LIANG Jiben, ZHUANG Weihua. PHOTOREFLECTANCE OF GaAs DOPING SUPERLATTICES[J]. Chin. Phys. Lett., 1987, 4(4): 189-192.
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