EFFECT ON TRANSPORT PROPERTIES OF ELECTRONS AT MODULATION-DOPED GaAs/AlGaAs HETEROSTRUCTURE INTERFACE BY NEUTRON IRRADIATION

It has been found that after the irradiation by fast neutrons the electron density and mobility of two-dimensional (2D) electron gas at modulation-doped GaAs/AlGaAs heterostructure interface increased by 17% and 23%, respectively, and the Hall plateaus and the minima of Shubnikov-de Haas (S-dH) oscillation curves anomalously shifted over each other. The measurements after three weeks showed that the effects mentioned above had disappeared substantially, however, the stronger persistent photoconductivity still remained.