THE STAEBLER-WRONSKI EFFECT IN MICROCRYSTALLINE SILICON FILMS

Light-induced dark- and photoconductivity changes (so-called SWE) have been investigated on GD undoped microcrystalline Si:H(μc-Si:Hl). The SWE decreases and reaches vanishirö as the grain size increases. An interpretation for the two-phase structure and the contribution of grain boundary defects is given.