FABRICATION AND PROPERTIES OF Nb₃Sn-Pb JOSEPHSON TUNNEL JUNCTIONS

Nb₃Sn-Pb Josephson tunnel juntions were fabricated using Nb₃Sn thin films formed by a simple coevaporation technique, while the tunnel barriers were formed by RF oxidation in an Ar and O₂ gas mixture. The I-V characteristics were measured at 4.2K, in which a sharp current rise at the gap voltage of 4.35mV was observed. The ratio of the subgap resistance to the normal one is as high as 6. The Nb₃Sn-Pb tunnel junction prepared are of good quality.