PHOTO-INDUCED REVERSIBLE CHANGE OF URBACH EDGE IN HYDROGENATED AMORPHOUS SILICON
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Abstract
Photoconductivity spectra temperature dependence combining with transmission measurements have been formed on hydrogenated amorphous silicon. After exposure by AM1 light a reversible increase of 6% of the Urbach parameter E0 (T,X) has been observed. This is a direct evidence for the fact that photo-induced changes in a-Si:H create not only metastable defects but also affect the topological disorder.
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HAN Daxing, QIU Changhua, WU Wenhao. PHOTO-INDUCED REVERSIBLE CHANGE OF URBACH EDGE IN HYDROGENATED AMORPHOUS SILICON[J]. Chin. Phys. Lett., 1986, 3(7): 297-300.
HAN Daxing, QIU Changhua, WU Wenhao. PHOTO-INDUCED REVERSIBLE CHANGE OF URBACH EDGE IN HYDROGENATED AMORPHOUS SILICON[J]. Chin. Phys. Lett., 1986, 3(7): 297-300.
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HAN Daxing, QIU Changhua, WU Wenhao. PHOTO-INDUCED REVERSIBLE CHANGE OF URBACH EDGE IN HYDROGENATED AMORPHOUS SILICON[J]. Chin. Phys. Lett., 1986, 3(7): 297-300.
HAN Daxing, QIU Changhua, WU Wenhao. PHOTO-INDUCED REVERSIBLE CHANGE OF URBACH EDGE IN HYDROGENATED AMORPHOUS SILICON[J]. Chin. Phys. Lett., 1986, 3(7): 297-300.
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