AMORPHOUS PHASE FORMATION OF Mo_1-xGe_x, Mo_1-xSi_x, FILMS AND THEIR SUPERCONDUCTING PROPERTIES

Mo_1-xGe_x, Mo_1-xSi_x, films were prepared by getter sputtering onto liquid nitrogen cooled substrates. The amorphous phase formations were Ge > 22 at . % , Si > 18 at .% respectively. With the increase of Ge, Si content, Tc decreased from 6 to 3K in the amorphous state. The measured results of (dB_c2/dT)T_c , J_c and ρ( 300K) /ρ(8K) indicated that the four chosen Mo_1-xSi_x films exhibit fundamental characteristics of amorphous superconductors.