X-RAY MEASUREMENT OF THE GRAIN SIZES OF WSi₂ FORMED IN COSPUTTERED W-Si FILMS

The broadening of X-ray diffraction peaks has been used successfully to measure the grain sizes of WSi₂ in cosputtered W-Si films after annealing. The grain size of WSi₂ increases with annealing temperature and reaches 115nm after annealing at 1000°C. The grain sizes are quite similar to that obtained by transmission electron microscope in electron beam coevaporated film and low pressure chemical vapor deposited film.