NITROGEN ISOELECTRONIC TRAPS IN GaAs
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Abstract
The photoluminescence spectrum of N central cell potential bound exciton Nx as well as emission peak from deformation potential bound exclton have been observed under hydrostatic pressures. The variation of the electron-phonon coupling and effective bound exciton radius with pressure is discussed.
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ZHAO Xue-shu, LI Guo-hua, HAN He-xiang, WANG Zhao-ping, TANG Ru-ming, CHE Rong-zhen. NITROGEN ISOELECTRONIC TRAPS IN GaAs[J]. Chin. Phys. Lett., 1984, 1(1): 19-22.
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ZHAO Xue-shu, LI Guo-hua, HAN He-xiang, WANG Zhao-ping, TANG Ru-ming, CHE Rong-zhen. NITROGEN ISOELECTRONIC TRAPS IN GaAs[J]. Chin. Phys. Lett., 1984, 1(1): 19-22.
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ZHAO Xue-shu, LI Guo-hua, HAN He-xiang, WANG Zhao-ping, TANG Ru-ming, CHE Rong-zhen. NITROGEN ISOELECTRONIC TRAPS IN GaAs[J]. Chin. Phys. Lett., 1984, 1(1): 19-22.
|
ZHAO Xue-shu, LI Guo-hua, HAN He-xiang, WANG Zhao-ping, TANG Ru-ming, CHE Rong-zhen. NITROGEN ISOELECTRONIC TRAPS IN GaAs[J]. Chin. Phys. Lett., 1984, 1(1): 19-22.
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