A New Silicon-Based Ferroelectric Sandwich Structure

A new silicon-based PbTiO₃/Pb(Zr_0.53Ti_0.47)O₃/PbTiO₃ sandwich structure is fabricated by a sol--gel method. Compared with other fabrication processes without PbTiO₃ buffer layers, the annealing temperature is greatly reduced by as much as 100°C. Capacitance--voltage, polarization--electric field and dielectric--frequency properties of this sandwich structure are studied. The Pb(Zr_xTi_1-x)O₃ films are proved to have good dielectric and ferroelectric properties.