Photoluminescent Properties of ZnO Films Deposited on Si Substrates
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Abstract
The photoluminescence of ZnO films deposited on Si substrates by reactive dc sputtering has been studied by using a synchrotron radiation(SR) light source. The excitation spectra show a strong excitation band around 195 nm related to 390 nm emission band. Under SR vacuum ultraviolet excitation, a new emission band peaked at 290 nm was found for the first time, besides the ultraviolet emission band (390 nm) and green band (520 nm).
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ZHANG Guo-Bin, SHI Chao-Shu, HAN Zheng-Fu, SHI Jun-Yan, FU Zhu-Xi, M. Kirm, G. Zimmerer. Photoluminescent Properties of ZnO Films Deposited on Si Substrates[J]. Chin. Phys. Lett., 2001, 18(3): 441-442.
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ZHANG Guo-Bin, SHI Chao-Shu, HAN Zheng-Fu, SHI Jun-Yan, FU Zhu-Xi, M. Kirm, G. Zimmerer. Photoluminescent Properties of ZnO Films Deposited on Si Substrates[J]. Chin. Phys. Lett., 2001, 18(3): 441-442.
|
ZHANG Guo-Bin, SHI Chao-Shu, HAN Zheng-Fu, SHI Jun-Yan, FU Zhu-Xi, M. Kirm, G. Zimmerer. Photoluminescent Properties of ZnO Films Deposited on Si Substrates[J]. Chin. Phys. Lett., 2001, 18(3): 441-442.
|
ZHANG Guo-Bin, SHI Chao-Shu, HAN Zheng-Fu, SHI Jun-Yan, FU Zhu-Xi, M. Kirm, G. Zimmerer. Photoluminescent Properties of ZnO Films Deposited on Si Substrates[J]. Chin. Phys. Lett., 2001, 18(3): 441-442.
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