Amorphous Hydrogenated Carbon-Nitrogen Alloy ThinFilms for Solar Cell Application

Amorphous hydrogenated carbon-nitrogen alloy (a-CN_x:H) thin films have been deposited on silicon substrates by an improved dc magnetron sputtering from a graphite target in nitrogen and hydrogen gas discharging. The films are investigated by using the Raman spectroscopy, x-ray photoelectron spectroscopy, spectral ellipsometer and electron spin resonance techniques. The optimized process condition for solar cells application is discussed. The photovoltaic property of a-CN_x:H/silicon heterojunction can be improved by adjustment of pressure ratio of hydrogen to nitrogen and unbalanced magnetic field intensity. Open circuit voltage and short circuit current reach 300 mV and 5.52 mA/cm², respectively.