Electrical Properties of ZnO/Si Heterostructure
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Abstract
The electrical Properties of a type of semiconductor heterostructure fabricated by depositing zinc oxide film on a silicon substrate are investigated. The I-V, I-T curves, and deep level transient spectra are measured. From these results, we acquire the information of the characteristics of the junction, and compute some energy levels of the samples.
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LIU Ci-Hui, CHEN Yu-Lin, LIN Bi-Xia, ZHU Jun-Jie, FU Zhu-Xi, PENG Cong, YANG Zhen. Electrical Properties of ZnO/Si Heterostructure[J]. Chin. Phys. Lett., 2001, 18(8): 1108-1110.
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LIU Ci-Hui, CHEN Yu-Lin, LIN Bi-Xia, ZHU Jun-Jie, FU Zhu-Xi, PENG Cong, YANG Zhen. Electrical Properties of ZnO/Si Heterostructure[J]. Chin. Phys. Lett., 2001, 18(8): 1108-1110.
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LIU Ci-Hui, CHEN Yu-Lin, LIN Bi-Xia, ZHU Jun-Jie, FU Zhu-Xi, PENG Cong, YANG Zhen. Electrical Properties of ZnO/Si Heterostructure[J]. Chin. Phys. Lett., 2001, 18(8): 1108-1110.
|
LIU Ci-Hui, CHEN Yu-Lin, LIN Bi-Xia, ZHU Jun-Jie, FU Zhu-Xi, PENG Cong, YANG Zhen. Electrical Properties of ZnO/Si Heterostructure[J]. Chin. Phys. Lett., 2001, 18(8): 1108-1110.
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