Field Effect Transistor with Self-Organized In_0.15Ga_0.85As/GaAs Quantum Wires as a Channel Grown on (553)B GaAs Substrates

A functional field effect transistor with self-organized In_0.15Ga_0.85As/GaAs quantum wires (QWRs) as a channel was achieved by molecular beam epitaxy on a (553)B GaAs substrate. Both the three-dimensional image of atom force microscopy and the polarization of the photoluminance peaks reveal that the channel of the device is a self-organized QWR structure. The device with a gate-length of 2 μm and a source-drain spacing of 5μm performed a good enhancement-mode characteristic and a maximum transconductance of 65 mS/mm was obtained at the gate voltage of 1.0 V by the geometric gate-width at room temperature. The saturated drain current is as high as 5.6 mA. The device exhibited a much larger current capacity due to the high density of the self-organized QWRs in its channel layer. In addition, the effective gate width was discussed in comparison with the geometric gate width of the device, from which a larger maximum transconductance of 130 mS/mm could be estimated.