Monte Carlo Simulation of Diamond Deposition at Low Temperature
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Abstract
Diamond deposition at low temperature is investigated and the relationship between substrate temperature for diamond growth and the energy of the carbonaceous species is given. The electron energy distribution and velocity distribution during the electron assisted chemical vapor deposition have been obtained by using Monte Carlo simulation. The main results obtained are as follows. (1) The substrate temperature for diamond growth will be lower than 800°C when the carbonaceous species on the substrate have mobility energy. For example, if the energy of the carbonaceous species is 0.75 eV, the substrate temperature will be 380°C - 600°C. (2) The great number of atomic H on the substrate is of importance to the growth of diamond films.
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DONG Li-Fang, ZHANG Yu-Hong. Monte Carlo Simulation of Diamond Deposition at Low Temperature[J]. Chin. Phys. Lett., 2001, 18(8): 1138-1140.
DONG Li-Fang, ZHANG Yu-Hong. Monte Carlo Simulation of Diamond Deposition at Low Temperature[J]. Chin. Phys. Lett., 2001, 18(8): 1138-1140.
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DONG Li-Fang, ZHANG Yu-Hong. Monte Carlo Simulation of Diamond Deposition at Low Temperature[J]. Chin. Phys. Lett., 2001, 18(8): 1138-1140.
DONG Li-Fang, ZHANG Yu-Hong. Monte Carlo Simulation of Diamond Deposition at Low Temperature[J]. Chin. Phys. Lett., 2001, 18(8): 1138-1140.
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