Surface Acoustic Wave Velocity and Electromechanical CouplingCoefficient of GaN Grown on (0001) Sapphire by Metal-Organic Vapor Phase Epitaxy

High-quality and high-resistivity GaN films were grown on (0001) sapphire face by metal-organic vapor phase epitaxy. To measure the surface acoustic wave properties accurately, we deposited metallized interdigital trans-ducers on the GaN surface. The acoustic surface wave velocity and electromechanical coupling coefficient were measured, respectively, to be 5667m/s and 1.9% by the pulse method.