Reflectivity of W/Si Multilayer at the Photoenergy of 700eVand 1200eV
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Abstract
We have deposited W/Si multilayer mirrors using magnetron
sputtering, and measured their reflectivity at the Beijing synchrotron Radiation Facility. The W/Si multilayer mirrors show the peak reflectivity of approximately 10% at a photo-energy of 1200eV and 10.5% at a photo-energy of 700eV at the incidence angle of 81°. So far, no higher reflectivity than that given in this letter has been reported.
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FENG Shi-Meng, ZHU Guo-Long, SHAO Jian-Da, YI Kui, FAN Zheng-Xiu. Reflectivity of W/Si Multilayer at the Photoenergy of 700eVand 1200eV[J]. Chin. Phys. Lett., 2001, 18(11): 1481-1482.
FENG Shi-Meng, ZHU Guo-Long, SHAO Jian-Da, YI Kui, FAN Zheng-Xiu. Reflectivity of W/Si Multilayer at the Photoenergy of 700eVand 1200eV[J]. Chin. Phys. Lett., 2001, 18(11): 1481-1482.
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FENG Shi-Meng, ZHU Guo-Long, SHAO Jian-Da, YI Kui, FAN Zheng-Xiu. Reflectivity of W/Si Multilayer at the Photoenergy of 700eVand 1200eV[J]. Chin. Phys. Lett., 2001, 18(11): 1481-1482.
FENG Shi-Meng, ZHU Guo-Long, SHAO Jian-Da, YI Kui, FAN Zheng-Xiu. Reflectivity of W/Si Multilayer at the Photoenergy of 700eVand 1200eV[J]. Chin. Phys. Lett., 2001, 18(11): 1481-1482.
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