Light-Induced Absorption in Nominally Pure Bismuth Silicon Oxide
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Abstract
Light-induced absorption in the nominally pure bismuth silicon oxide is investigated experimentally and the result shows that it consists of a transient and persistent part. The experiment evidence is analysed based on the model of three groups of trap (donor) centers.
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LI Fei-Fei, XU Jing-Jun, KONG Yong-Fa, HUANG Hui, ZHANG Guang-Yin, YANG Chun-Hui, XU Yu-Heng. Light-Induced Absorption in Nominally Pure Bismuth Silicon Oxide[J]. Chin. Phys. Lett., 2001, 18(12): 1595-1597.
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LI Fei-Fei, XU Jing-Jun, KONG Yong-Fa, HUANG Hui, ZHANG Guang-Yin, YANG Chun-Hui, XU Yu-Heng. Light-Induced Absorption in Nominally Pure Bismuth Silicon Oxide[J]. Chin. Phys. Lett., 2001, 18(12): 1595-1597.
|
LI Fei-Fei, XU Jing-Jun, KONG Yong-Fa, HUANG Hui, ZHANG Guang-Yin, YANG Chun-Hui, XU Yu-Heng. Light-Induced Absorption in Nominally Pure Bismuth Silicon Oxide[J]. Chin. Phys. Lett., 2001, 18(12): 1595-1597.
|
LI Fei-Fei, XU Jing-Jun, KONG Yong-Fa, HUANG Hui, ZHANG Guang-Yin, YANG Chun-Hui, XU Yu-Heng. Light-Induced Absorption in Nominally Pure Bismuth Silicon Oxide[J]. Chin. Phys. Lett., 2001, 18(12): 1595-1597.
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