Range and Annealing Behaviour of Pb⁺ Ion-Implanted into LiNbO₃ Crystals at Moderate Energies

Pb⁺ ions have been implanted into LiNbO₃ crystals in the energy range of 100-350keV at doses of 5 x 10¹⁵, 1 x 10¹⁶ and 2 x 10¹⁶ ions/cm². The profile of the implanted ions was measured by Rutherford backscattering. The mean projected range and the range straggling obtained from the experiment were compared with the TRIM'98 and SRIM 2000 code. In the present case, the TRIM'98 code predicts experimental values better than those of the SRIM 2000 code. The depth distribution is also found to be independent of dose for 350-keV Pb⁺ implanted into LiNbO₃ crystals. After 800°C annealing for 60 min in ambient air, obvious diffusion occurs to the implanted Pb⁺ ions at 150 keV with a dose of 5 x 10¹⁵ ions/cm². After a low-temperature treatment at 77 K in liquid nitrogen, no obvious diffusion phenomenon occurs for the implanted Pb⁺ ions in LiNbO₃.