A Silicon-Based Ferroelectric Capacitor for Memory Devices
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Abstract
We study a silicon-based PbTiO3/Pb(Zr0.53Ti0.47)O3/PbTiO3 capacitor, prepared by an improved sol-gel method. The ferroelectric capacitor, with high remanent polarization of 15μC/cm2 at a coercive field of about 30kV/cm, an ultra-low leakage current density of 0.1nA/cm2, and almost fatigue free properties, It can be used as a promising candidate for ferroelectric memory devices.
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REN Tian-Ling, ZHANG Lin-Tao, LIU Li-Tian, LI Zhi-Jian. A Silicon-Based Ferroelectric Capacitor for Memory Devices[J]. Chin. Phys. Lett., 2002, 19(3): 432-433.
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REN Tian-Ling, ZHANG Lin-Tao, LIU Li-Tian, LI Zhi-Jian. A Silicon-Based Ferroelectric Capacitor for Memory Devices[J]. Chin. Phys. Lett., 2002, 19(3): 432-433.
|
REN Tian-Ling, ZHANG Lin-Tao, LIU Li-Tian, LI Zhi-Jian. A Silicon-Based Ferroelectric Capacitor for Memory Devices[J]. Chin. Phys. Lett., 2002, 19(3): 432-433.
|
REN Tian-Ling, ZHANG Lin-Tao, LIU Li-Tian, LI Zhi-Jian. A Silicon-Based Ferroelectric Capacitor for Memory Devices[J]. Chin. Phys. Lett., 2002, 19(3): 432-433.
|
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