Electron Field Emission of CN_x Thin Films Prepared by Low Pressure Plasma Enhanced Chemical Vapor Deposition

CN_x thin films were prepared using low pressure plasma enhanced chemical vapor deposition (LP-PECVD), and then bombarded by low energy N⁺₂. The compositions before and after N⁺₂ bombardment were compared by using x-ray photoelectron spectroscopy. The electron field emission characteristics of CN_x thin films before and after N⁺₂ bombardment were studied under the pressure of 10^-6Pa. For the samples, the turn-on emission field decreased from 2.5V/μm to 1.2V/μm while the stable current density increased from 0.5mA/cm² to a value larger than 1mA/cm² before and after the bombardment. Our results illustrated that the field emission characteristics were improved after the bombardment of N⁺₂.