Preparation and Properties of GaN Films on GaAs Substrates
-
Abstract
Polycrystalline gallium nitride films with hexagonal structure were prepared by a post-nitridation technique. A strong blue photoluminescence located at 458 nm and a UV photoluminescence located at 368 nm were observed at room temperature. The 368 nm peak is PL from band-edge emission. The blue luminescence is attributed to the transition from deep donor level to the valence band.
Article Text
-
-
-
About This Article
Cite this article:
YANG Ying-Ge, MA Hong-Lei, MA Jin, ZHANG Ya-Fei. Preparation and Properties of GaN Films on GaAs Substrates[J]. Chin. Phys. Lett., 2004, 21(5): 955-957.
|
YANG Ying-Ge, MA Hong-Lei, MA Jin, ZHANG Ya-Fei. Preparation and Properties of GaN Films on GaAs Substrates[J]. Chin. Phys. Lett., 2004, 21(5): 955-957.
|
YANG Ying-Ge, MA Hong-Lei, MA Jin, ZHANG Ya-Fei. Preparation and Properties of GaN Films on GaAs Substrates[J]. Chin. Phys. Lett., 2004, 21(5): 955-957.
|
YANG Ying-Ge, MA Hong-Lei, MA Jin, ZHANG Ya-Fei. Preparation and Properties of GaN Films on GaAs Substrates[J]. Chin. Phys. Lett., 2004, 21(5): 955-957.
|
DownLoad: