Range Distribution Parameters and Electronic Stopping Power for ¹⁹F⁺ Ions in SnO₂, Indium-Tin Oxide, AgGaSe₂ and AgGaS₂: Comparison Between Theory and Experiment

Range distributions of fluorine for ¹⁹F⁺ implantation into SnO₂, indium--tin oxide, AgGaS₂ and AgGaSe₂ are measured by using the ¹⁹F(p,α γ)¹⁶O resonant nuclear reactions. The electronic stopping cross sections for ¹⁹F ions in these materials are derived from the measured range distributions. These experimental results are compared with those obtained from the newest version of stopping and range computer code, SRIM2003. The values of projected range predicted by the SRIM2003 agree well with the measured values for AgGaS₂ and AgGaSe₂ substrates. However, the values given by the SRIM2003 substantially deviate from the experimental values for the oxide materials SnO₂ and ITO.