Au/Ti/p-Diamond Ohmic Contacts Prepared by Radio-Frequency Sputtering

The as-deposited Au/Ti/p-diamond contacts prepared by rf sputtering are ohmic. The ohmic characteristics of the contacts are improved after annealing. As for the as-deposited and annealed contacts, the specific contact resistivities of 2.886 x 10^-3 and 2.040 x 10^-4 Ω.cm² are obtained, respectively. The x-ray photoelectron spectroscopy analysis indicates that the titanium carbide formation occurs at the interface between titanium and the diamond substrate in the as-deposited state, and no TiO₂ is observed.