THE INSTENSITY RATIOS I(L)/I(K) FROM Ge TO Sn MEASURED IN TEM USING EDS
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Abstract
The intensity ratios I(L)/I(K) from Ge to Sn have been measured in a Transmission electron microscope (TEM) using X-ray energy dispersive spectroscopy (EDS) at 40, 80, 100, 120, 160, 200kV. The large discrepancy between experimental and calculated values indicates that the formula of ionization cross-section should be revised.
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WU Zi-qin, DUAN Jian-zhong. THE INSTENSITY RATIOS I(L)/I(K) FROM Ge TO Sn MEASURED IN TEM USING EDS[J]. Chin. Phys. Lett., 1985, 2(6): 257-260.
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WU Zi-qin, DUAN Jian-zhong. THE INSTENSITY RATIOS I(L)/I(K) FROM Ge TO Sn MEASURED IN TEM USING EDS[J]. Chin. Phys. Lett., 1985, 2(6): 257-260.
|
WU Zi-qin, DUAN Jian-zhong. THE INSTENSITY RATIOS I(L)/I(K) FROM Ge TO Sn MEASURED IN TEM USING EDS[J]. Chin. Phys. Lett., 1985, 2(6): 257-260.
|
WU Zi-qin, DUAN Jian-zhong. THE INSTENSITY RATIOS I(L)/I(K) FROM Ge TO Sn MEASURED IN TEM USING EDS[J]. Chin. Phys. Lett., 1985, 2(6): 257-260.
|
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