INVESTIGATION OF THE THERMAL DONORS IN SILICON

We have made, for the first time, a trial study of the electric behaviours of the 450°C annealed CZ-Si having several different dopings. Four energy levels were observed (E₁ = E_c-(280-350)meV; E₂ = E_c-(110-120)meV; E₃ = E_c-(52-60)meV; E₄ = E_c-30meV) in p-Si samples, which were capable of undergoing type change after annealing. In the heat-treated n-Si samples, only E₂ and E₄ were observed. Although these levels correspond to different structure models, they are all related, in one way or another, to the oxygen atoms in Si.