Electronic and Optical Properties of (GaN)n/(AlN)n(001) Superlattices
-
Abstract
The band structure of the short period zinc-blende (GaN)n/(AlN)n(001) superlattices has been calculated by means of semi-empirical tight-binding sp3s* method. The superlattices energy gap dependence on layer number n is given out. On the basis of the calculated eigenfunctions and eigenvalues of the superlattices (SL), the imaginary parts of the dielectric function ε2(ω) of (GaN)n/(AlN)n(001) superlattices were obtained. In order to compare with the optical properties of bulk zinc-blende GaN and AlN, we also calculated ε2(ω) of the two compounds. It is shown that there are some discernible effects due to confinement and superlattice periodicity.
Article Text
-
-
-
About This Article
Cite this article:
LI Kai-hang, HUANG Mei-chun, ZHU Zi-zhong, ZHANG Zhi-peng. Electronic and Optical Properties of (GaN)n/(AlN)n(001) Superlattices[J]. Chin. Phys. Lett., 1999, 16(6): 437-439.
LI Kai-hang, HUANG Mei-chun, ZHU Zi-zhong, ZHANG Zhi-peng. Electronic and Optical Properties of (GaN)n/(AlN)n(001) Superlattices[J]. Chin. Phys. Lett., 1999, 16(6): 437-439.
|
LI Kai-hang, HUANG Mei-chun, ZHU Zi-zhong, ZHANG Zhi-peng. Electronic and Optical Properties of (GaN)n/(AlN)n(001) Superlattices[J]. Chin. Phys. Lett., 1999, 16(6): 437-439.
LI Kai-hang, HUANG Mei-chun, ZHU Zi-zhong, ZHANG Zhi-peng. Electronic and Optical Properties of (GaN)n/(AlN)n(001) Superlattices[J]. Chin. Phys. Lett., 1999, 16(6): 437-439.
|