THE BEHAVIOUR OF Si IN AlxGa1-xAs GROWN BY MBE
-
Abstract
With the use of RHEED, a new surface reconstruction AlxGa1-xAs (001)-(3 x 2) induced by Si dopant, and a Si dopant effect for suppressing island growth and promoting layer by layer growth are observed.
Article Text
-
-
-
About This Article
Cite this article:
ZHOU Jun-ming, HUANG-Yi, YANG Zhong-xing, CHENG Wen-qin. THE BEHAVIOUR OF Si IN AlxGa1-xAs GROWN BY MBE[J]. Chin. Phys. Lett., 1985, 2(6): 277-280.
|
ZHOU Jun-ming, HUANG-Yi, YANG Zhong-xing, CHENG Wen-qin. THE BEHAVIOUR OF Si IN AlxGa1-xAs GROWN BY MBE[J]. Chin. Phys. Lett., 1985, 2(6): 277-280.
|
ZHOU Jun-ming, HUANG-Yi, YANG Zhong-xing, CHENG Wen-qin. THE BEHAVIOUR OF Si IN AlxGa1-xAs GROWN BY MBE[J]. Chin. Phys. Lett., 1985, 2(6): 277-280.
|
ZHOU Jun-ming, HUANG-Yi, YANG Zhong-xing, CHENG Wen-qin. THE BEHAVIOUR OF Si IN AlxGa1-xAs GROWN BY MBE[J]. Chin. Phys. Lett., 1985, 2(6): 277-280.
|
DownLoad: