DEFECTS AND THEIR THERMAL ANNEALING BEHAVIOURS IN n- Si IMPLANTED WITH BORON AND PHOSPHORUS
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Abstract
An up to date most detailed information of H(Hole) as well as E(Electron) traps produced by low dose (1011cm-2) boron and phosphorus implantation in n-Si and their thermal annealing behaviours are reported. For the first time, two hole traps H2(0.62), H3(0.49) of huge concentrations were detected in B+ implanted n-Si. They are tentatively assigned as boron related acceptors. H2(0.51) of huge concentration were detected in P+ implanted n-Si. Other three hole traps H1(0.63), H4( 0.37) and H5(0.15) were detected in both B+ and P+ implanted n-Si; they are thus unrelated to boron. E traps are also reported; some of these E traps are consistent with previous reports and some are new.
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References
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