EFFECT OF HEAVY DOPING ON THE OPTICAL SPECTRA OF SILICON

In this paper reflectance (R) and thermoreflectance (TR) spectra in heavily doped silicon concerning both interband and intraband transitions are reported and discussed. The heavily doped sample shows a red-shift and lifetime broadening in the two singularrities E₁ (~3.4eV) and E₂(~4.5eV). The values of the scattering time τ extracted from the reflectivity fit are obtained and compared with those obtained from Hall mobility measurements.