IR SPECTRAL STUDY OF a-Si: H FILMS PREPARED BY H-DOPING EVAPORATION METHOD

The IR difference spectra of a-Si:H films prepared by H-doping evaporation ( H. D. E. ) method were compared with those by glow discharge (G.D.) method. It has been found that the bonding H content of E.D.E. sample is comparable to that of G.D. sample. The behaviour of absorption bonds of dehydrogenated samples seems to show that the Si-H bonds in H.D.E. sample are more stable than those in G.D. sample.