STUDIES ON SEMICONDUCTOR SURFACE PARAMETER BY USE OF SAW TECHNIQUE
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Abstract
Using the concepts of continuity of interface impedance, the changes of both the velocity and attenuation of surface acoustic wave (SAW) caused by acousto-electric interaction are considered layer by lager under different semicon-ductor surface conditions for the piezoelectric-insulator-semiconductor(PIS) structures. Surface densities of states and fixed charge densities are evaluated by computer fitting and the results agree well with those obtained by other methods.
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WU Wen-qiu, QIN Xi. STUDIES ON SEMICONDUCTOR SURFACE PARAMETER BY USE OF SAW TECHNIQUE[J]. Chin. Phys. Lett., 1985, 2(11): 485-488.
WU Wen-qiu, QIN Xi. STUDIES ON SEMICONDUCTOR SURFACE PARAMETER BY USE OF SAW TECHNIQUE[J]. Chin. Phys. Lett., 1985, 2(11): 485-488.
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WU Wen-qiu, QIN Xi. STUDIES ON SEMICONDUCTOR SURFACE PARAMETER BY USE OF SAW TECHNIQUE[J]. Chin. Phys. Lett., 1985, 2(11): 485-488.
WU Wen-qiu, QIN Xi. STUDIES ON SEMICONDUCTOR SURFACE PARAMETER BY USE OF SAW TECHNIQUE[J]. Chin. Phys. Lett., 1985, 2(11): 485-488.
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