Influences of H⁺ Implantation on the Boron-Doped Synthesized by Chemical Vapor Deposition Diamond Films

Diamond films (DF) were preliminarily B doped in situ during chemical vapor deposition. Subsequently, the films were implanted with 120 keV H⁺ to dose of 5 x 10¹⁴ ~ 5 x 10¹⁶cm^-2. After the implantation, the B doped DF become insulating and Raman measurements indicate that the implantation has amorphous carbon and graphite etched. It is known that the formation of H-B pairs plays an important pole in property changes. However, for larger dose cases, the electrical resistance of DF is influenced by radiation damage and/or non-diamond phases. In addition to them, annealing makes the specimens conducting again. This phenomenon maybe has potential for application in designing DF device.