DANGLING-BOND AND VOID-LIKE STRUCTURE IN AMORPHOURS SEMICONDUCTORS
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Abstract
To explain the differences in properties between the chalcogenide glassy semiconductors and the tetrahedrally-bonded semiconductors, a microscopic structural model is given in this letter. Based on this model, we can not only get two-level systems, negative-U pairs, and the Urbach rule, but also account for some recent experiments.
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WU Xiang, CHEN Hong. DANGLING-BOND AND VOID-LIKE STRUCTURE IN AMORPHOURS SEMICONDUCTORS[J]. Chin. Phys. Lett., 1985, 2(12): 533-536.
WU Xiang, CHEN Hong. DANGLING-BOND AND VOID-LIKE STRUCTURE IN AMORPHOURS SEMICONDUCTORS[J]. Chin. Phys. Lett., 1985, 2(12): 533-536.
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WU Xiang, CHEN Hong. DANGLING-BOND AND VOID-LIKE STRUCTURE IN AMORPHOURS SEMICONDUCTORS[J]. Chin. Phys. Lett., 1985, 2(12): 533-536.
WU Xiang, CHEN Hong. DANGLING-BOND AND VOID-LIKE STRUCTURE IN AMORPHOURS SEMICONDUCTORS[J]. Chin. Phys. Lett., 1985, 2(12): 533-536.
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