Ambipolar Thin-Film Field-Effect Transistor Based on Pentacene
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Abstract
Organic thin film field-effect transistors based on pentacene have been fabricated by the method of fully-evaporation. The present device with a thin insulator layer can operate in low voltage, and shows ambipolar mode. In the case of the p-channel, the field-effect hole mobility was calculated to be 0.17cm2/Vs, whereas the field-effect electron mobility was about 0.02cm2/Vs for n-channel.
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WANG Wei, SHI Jia-Wei, LIANG Chang, ZHANG Hong-Mei, LIU Ming-Da, QUAN Bao-Fu, GUO Shu-Xu, FANG Jun-Feng, MA Dong-Ge. Ambipolar Thin-Film Field-Effect Transistor Based on Pentacene[J]. Chin. Phys. Lett., 2005, 22(2): 496-498.
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WANG Wei, SHI Jia-Wei, LIANG Chang, ZHANG Hong-Mei, LIU Ming-Da, QUAN Bao-Fu, GUO Shu-Xu, FANG Jun-Feng, MA Dong-Ge. Ambipolar Thin-Film Field-Effect Transistor Based on Pentacene[J]. Chin. Phys. Lett., 2005, 22(2): 496-498.
|
WANG Wei, SHI Jia-Wei, LIANG Chang, ZHANG Hong-Mei, LIU Ming-Da, QUAN Bao-Fu, GUO Shu-Xu, FANG Jun-Feng, MA Dong-Ge. Ambipolar Thin-Film Field-Effect Transistor Based on Pentacene[J]. Chin. Phys. Lett., 2005, 22(2): 496-498.
|
WANG Wei, SHI Jia-Wei, LIANG Chang, ZHANG Hong-Mei, LIU Ming-Da, QUAN Bao-Fu, GUO Shu-Xu, FANG Jun-Feng, MA Dong-Ge. Ambipolar Thin-Film Field-Effect Transistor Based on Pentacene[J]. Chin. Phys. Lett., 2005, 22(2): 496-498.
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