Two Types of Pressure Dependence of Residual Resistivity in Doped Kondo Insulators

The pressure dependence of the residual resistivity of the doped electron-type and hole-type Kondo insulators (KIs) are calculated within the framework of the slave-boson mean-field theory and the coherent potential approximation. It is shown that as the pressure increases, the resistivity increases and decreases for the dilute doping electron-type and hole-type KIs, respectively. These results are qualitatively in agreement with the experiments.