AN IMPROVED DEFECT MODEL FOR SCHOTTKY BARRIER FORMATION ON III-V COMPOUNDS
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Abstract
An improved defect model has been proposed by combination of the defect model with the Bardeen model. The predictions based on this model can qualitatively explain the experimental results of the Schottky barrier formation on GaAs(110).
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PAN shihong, MO Dang, W.E.Spicer. AN IMPROVED DEFECT MODEL FOR SCHOTTKY BARRIER FORMATION ON III-V COMPOUNDS[J]. Chin. Phys. Lett., 1986, 3(1): 1-4.
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PAN shihong, MO Dang, W.E.Spicer. AN IMPROVED DEFECT MODEL FOR SCHOTTKY BARRIER FORMATION ON III-V COMPOUNDS[J]. Chin. Phys. Lett., 1986, 3(1): 1-4.
|
PAN shihong, MO Dang, W.E.Spicer. AN IMPROVED DEFECT MODEL FOR SCHOTTKY BARRIER FORMATION ON III-V COMPOUNDS[J]. Chin. Phys. Lett., 1986, 3(1): 1-4.
|
PAN shihong, MO Dang, W.E.Spicer. AN IMPROVED DEFECT MODEL FOR SCHOTTKY BARRIER FORMATION ON III-V COMPOUNDS[J]. Chin. Phys. Lett., 1986, 3(1): 1-4.
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