Passive Q-Switching Modelocked Yb3+-Doped Fibre Laser with GaAs Absorber Grown at Low Temperature
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FENG Xiao-Ming,
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WANG Yong-Gang,
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LIU Yuan-Yuan,
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LAN Yong-Sheng,
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LIN Tao,
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WANG Jun,
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WANG Xiao-Wei,
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FANG Gao-Zhan,
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MA Xiao-Yu,
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WANG Yong-Gang,
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ZHANG Zhi-Gang
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Abstract
GaAs absorber was grown at low temperature (550°C) by metal organic chemical vapour deposition (MOCVD) and was used as an output coupler with which we realized Q-switching modelocked Yb3+-doped fibre laser. The shortest period of the envelope of the Q-switched modelocking is about 3μs. The modelocking threshold is 4.27W and the highest average output pulse power is 290mW. The modelocking frequency is 12MHz.
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FENG Xiao-Ming, WANG Yong-Gang, LIU Yuan-Yuan, LAN Yong-Sheng, LIN Tao, WANG Jun, WANG Xiao-Wei, FANG Gao-Zhan, MA Xiao-Yu, WANG Yong-Gang, ZHANG Zhi-Gang. Passive Q-Switching Modelocked Yb3+-Doped Fibre Laser with GaAs Absorber Grown at Low Temperature[J]. Chin. Phys. Lett., 2005, 22(2): 391-393.
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FENG Xiao-Ming, WANG Yong-Gang, LIU Yuan-Yuan, LAN Yong-Sheng, LIN Tao, WANG Jun, WANG Xiao-Wei, FANG Gao-Zhan, MA Xiao-Yu, WANG Yong-Gang, ZHANG Zhi-Gang. Passive Q-Switching Modelocked Yb3+-Doped Fibre Laser with GaAs Absorber Grown at Low Temperature[J]. Chin. Phys. Lett., 2005, 22(2): 391-393.
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FENG Xiao-Ming, WANG Yong-Gang, LIU Yuan-Yuan, LAN Yong-Sheng, LIN Tao, WANG Jun, WANG Xiao-Wei, FANG Gao-Zhan, MA Xiao-Yu, WANG Yong-Gang, ZHANG Zhi-Gang. Passive Q-Switching Modelocked Yb3+-Doped Fibre Laser with GaAs Absorber Grown at Low Temperature[J]. Chin. Phys. Lett., 2005, 22(2): 391-393.
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FENG Xiao-Ming, WANG Yong-Gang, LIU Yuan-Yuan, LAN Yong-Sheng, LIN Tao, WANG Jun, WANG Xiao-Wei, FANG Gao-Zhan, MA Xiao-Yu, WANG Yong-Gang, ZHANG Zhi-Gang. Passive Q-Switching Modelocked Yb3+-Doped Fibre Laser with GaAs Absorber Grown at Low Temperature[J]. Chin. Phys. Lett., 2005, 22(2): 391-393.
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