Influence of Interface Charge on Electrical Properties of ZnO/Si Heterojunction

The capacitance--voltage and current--voltage properties of the samples before and after annealing are investigated at 300K and 195K. It is found that the interface charge plays an important role for the
heterojunction properties. After annealing, the samples exhibit typical junction properties. The heterojunction shows a built-in potential 0.62eV consistent with the theoretical result 0.67eV. However, the sample exhibits more complex behaviour before annealing. The experimental results can be explained by heterojunction theory when introducing interface charge, which suggests that the annealing can reduce interface charge and can improve the junction properties of the samples.