Carbide Identification in Different Regions of a Thin Metal Film Covering on an HPHT As-Grown Diamond Single Crystal from Ni--Mn--C System
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Abstract
Diamond single crystals were synthesized in the presence of Ni--Mn catalyst under high temperature and high pressure (HPHT). A thin metal film covering on as-grown diamond formed during diamond growth was examined using transmission electron microscopy. It was shown that phase compositions of the region near the as-grown diamond are different from those of other regions in the film. We found γ-(Ni,Mn) solid solution, diamond, Ni3C and Mn23C6 in the region near the as-grown diamond, while graphite, Mn7C3 and γ-(Ni,Mn) could be found in other regions of the film. The relationship between the diamond growth and the carbides in the film was analysed briefly. It is suggested that the carbon source for diamond growth should be closely related to the decomposition of carbides in the region near the diamond single crystal at HPHT, not being directly from that of the graphite structure.
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XU Bin, CUI Jian-Jun, LI Mu-Sen, LI Cheng-Mei, CHU Fu-Min, FENG Li-Ming. Carbide Identification in Different Regions of a Thin Metal Film Covering on an HPHT As-Grown Diamond Single Crystal from Ni--Mn--C System[J]. Chin. Phys. Lett., 2005, 22(2): 478-481.
XU Bin, CUI Jian-Jun, LI Mu-Sen, LI Cheng-Mei, CHU Fu-Min, FENG Li-Ming. Carbide Identification in Different Regions of a Thin Metal Film Covering on an HPHT As-Grown Diamond Single Crystal from Ni--Mn--C System[J]. Chin. Phys. Lett., 2005, 22(2): 478-481.
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XU Bin, CUI Jian-Jun, LI Mu-Sen, LI Cheng-Mei, CHU Fu-Min, FENG Li-Ming. Carbide Identification in Different Regions of a Thin Metal Film Covering on an HPHT As-Grown Diamond Single Crystal from Ni--Mn--C System[J]. Chin. Phys. Lett., 2005, 22(2): 478-481.
XU Bin, CUI Jian-Jun, LI Mu-Sen, LI Cheng-Mei, CHU Fu-Min, FENG Li-Ming. Carbide Identification in Different Regions of a Thin Metal Film Covering on an HPHT As-Grown Diamond Single Crystal from Ni--Mn--C System[J]. Chin. Phys. Lett., 2005, 22(2): 478-481.
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