Photoluminescence of Dislocations in Nitrogen Doped Czochralski Silicon

We investigate optical properties of dislocations in nitrogen-doped and nitrogen-free Czochralski silicon. The dislocations are formed during crystal growth, but not formed during deformation. The results show that in nitrogen-doped samples, a broad band replaced the D1 band of dislocation, regardless of dislocation density. The replacement of D1 band is caused by the non-irradiation combination induced by oxygen precipitation. Moreover, a new emission at 0.975eV is observed in both the nitrogen-free and doped samples when the dislocation density is lower than 10⁴ cm^-2.